Combination of intrinsic and shape anisotropy for reduced switching field fluctuations
US7057253B2 · kind B2 · utility
4Cited by
3References
13Claims
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Key dates
| Filing date | Jun 19, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Mar 26, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell and method of manufacturing thereof, wherein the angle between the shape anisotropy axis and the intrinsic anisotropy axis of the magnetic material layer is optimized to minimize fluctuations in the switching field. The angle between shape anisotropy axis and intrinsic anisotropy axis is preferably between 45 and less than 90 degrees. Magnetic layers may be used having increased thickness, resulting in increased activation energy. Magnetic memory cells may be manufactured that are more stable for long term storage and have improved write margins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.