Semiconductor dynamic sensor having variable capacitor formed on laminated substrate
US7059190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Aug 28, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An acceleration sensor is formed on a top surface of a laminated silicon-on-insulator substrate. The acceleration sensor is composed of first and second capacitors each including a movable electrode that moves according to acceleration imposed thereon. The first and the second capacitors are so made that their capacitances change differently when the same acceleration is imposed and that the capacitance difference represents an amount of acceleration imposed thereon. A third capacitor having an output electrode solidly connected to the base substrate via the insulation layer is also formed on the same silicon-on-insulator substrate. An output representing amount of acceleration is taken out from the output electrode of the third capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.