Method for forming macropores in a layer and products obtained thereof
US7060587B2 · kind B2 · utility
3Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2005 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Jan 28, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.