Method of adjusting resistors post silicide process
US7060612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a resistor in which the resistance value of the resistor is measured and adjusted after silicidation is provided. The method of the present invention begins with first providing at least one resistor, e.g., polysilicon, having a resistance value on a surface of a semiconductor substrate. The at least one resistor has been subjected to a silicidation process. Next, the resistance value of the at least one resistor is measured to determine the actual resistance of the resistor after silicidation. After the measuring step, the resistance of the resistor is adjusted to achieve a desired resistance value. The adjusting may include a post silicidation rapid thermal anneal and/or a post silicidation ion implantation and a low temperature rapid thermal anneal step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.