Inventor · Colchester, VT, US

Robert M. Rassel

112Patents
11h-index
99Co-inventors
79Inventor score

Filing activity: Sep 30, 2003 → Jun 5, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US8110862B2 Semiconductor structure including trench capacitor and trench resistor Electricity 36 Active
US8674423B2 Semiconductor structure having vias and high density capacitors Electricity 25 Active
US7217981B2 Tunable temperature coefficient of resistance resistors and method of fabricating same Electricity 24 Expired
US7397087B2 FEOL/MEOL metal resistor for high end CMOS Electricity 22 Expired
US7242071B1 Semiconductor structure Electricity 21 Active
US8159040B2 Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor Electricity 13 Active
US7750408B2 Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuit Electricity 13 Active
US7545007B2 MOS varactor with segmented gate doping Electricity 12 Expired
US7361950B2 Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric Electricity 12 Expired
US7361993B2 Terminal pad structures and methods of fabricating same Electricity 12 Expired
US8035190B2 Semiconductor devices Electricity 11 Active
US7989306B2 Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate Electricity 11 Active
US7825441B2 Junction field effect transistor with a hyperabrupt junction Electricity 11 Active
US7714412B2 MOS varactor using isolation well Electricity 11 Expired
US7183628B2 Structure and method of hyper-abrupt junction varactors Electricity 11 Expired
US7943445B2 Asymmetric junction field effect transistor Electricity 9 Active
US7560761B2 Semiconductor structure including trench capacitor and trench resistor Electricity 8 Active
US8168500B2 Double gate depletion mode MOSFET Electricity 8 Active
US7112535B2 Precision polysilicon resistor process Electricity 8 Expired
US9412736B2 Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias Electricity 8 Active
US7670889B2 Structure and method for fabrication JFET in CMOS Electricity 7 Active
US8466501B2 Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET Electricity 6 Active
US8421181B2 Schottky barrier diode with perimeter capacitance well junction Electricity 6 Active
US7335927B2 Lateral silicided diodes Electricity 6 Active
US7994895B2 Heat sink for integrated circuit devices Emerging Cross-Sectional Technologies 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.