Polymer compound, resist material and pattern formation method
US7060775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6:wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5, R6 and R11 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R12 is a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a carbon number not less than 1 and not more than 20; 0<a<1; 0<b<1; d is 1 or 2; e is 0, 1, 2, 3 or 4; and 1≦d+e≦5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.