Neutral beam source having electromagnet used for etching semiconductor device
US7060931B2 · kind B2 · utility
4Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H3/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.