High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
US7061026B2 · kind B2 · utility
5Cited by
1References
18Claims
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Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2 system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.