High-voltage device structure
US7061029B1 · kind B1 · utility
8Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Feb 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A high-voltage device structure disposed in a substrate of a first conductivity type includes a first well and a second well each of a second conductivity type, a source diffusion region and a drain diffusion region each of a first length located in the first well and the second well respectively, and a gate of a second length on the substrate surface. Since the gate of the second length is longer than the source diffusion region and the drain diffusion region of the first length, the two sides of the gate have two spare regions. Two windows are located in the spare regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.