Limited output address register technique providing selectively variable write latency in DDR2 (double data rate two) integrated circuit memory devices
US7061823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Sep 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4082
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A limited output address register technique for selectively variable write latency in double data rate 2 (DDR2) integrated circuit memory devices providing a reduced number of paths directly connected to the output. A chain of DQ flip-flops is disclosed which is only loaded on valid write address commands but shifts continually thereafter every clock cycle. Since new READ or WRITE commands cannot be issued on successive cycles, at any given point in the chain an address (or state) is valid for at least two cycles. Therefore, a selected point in the register chain can be used to satisfy the requirements for two different latencies. For DDR2, having N write latency cases, only ceil(N/2) access points to the write address output have to be provided thereby saving on-chip area and increasing speed. In a specific embodiment disclosed, DDR1 may also be supported.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.