Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems
US7063920B2 · kind B2 · utility
203Cited by
2References
22Claims
0Family size
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Key dates
| Filing date | May 16, 2003 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.