Method for manufacturing semiconductor device
US7064060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jan 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat treatment is performed to an insulating film composition, formed on a semiconductor substrate, at a temperature of 350° C. in an inert gas ambient to form a non-porous insulating film. Next, dry etching is performed using a resist pattern as a mask to form a trench in the non-porous insulating film, ashing is performed to remove the resist pattern, and the surface of the semiconductor substrate is cleaned. Thereafter, a second heat treatment is performed for the non-porous insulating film to form a porous insulating film. Since the second heat treatment is performed in an oxidizing-gas atmosphere, the pore-generating material can be removed at a temperature lower than the temperature of conventional methods to form an insulating film having a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.