Transistor and semiconductor device
US7064346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | May 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44, the emitter electrode 45 and the collector electrode 46 are formed respectively on the base 41, the emitter 42 and the collector 43. As the n-type transparent semiconductor, for example, n-type ZnO is used. The n-type ZnO is ZnO doped with, for example, group III elements, group VII elements. As the p-type transparent semiconductor, for example, p-type ZnO is used. The p-type ZnO is ZnO doped with, for example, group I elements and group V elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.