Patent · US Expired

Light emitting diodes with improved light extraction efficiency

US7064355B2 · kind B2 · utility

58Cited by
43References
64Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2001
Grant dateJun 20, 2006
Priority date
Expiry dateDec 5, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/856

Abstract

Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.