Michael D. Camras
61Patents
17h-index
54Co-inventors
87Inventor score
Filing activity: Aug 26, 1988 → Dec 20, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6784463B2 | III-Phospide and III-Arsenide flip chip light-emitting devices | Electricity | 299 | Expired |
| US6635904B2 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 272 | Expired |
| US6489636B1 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 224 | Expired |
| US6987613B2 | Forming an optical element on the surface of a light emitting device for improved light extraction | Electricity | 125 | Expired |
| US7009213B2 | Light emitting devices with improved light extraction efficiency | Electricity | 115 | Expired |
| US7053419B1 | Light emitting diodes with improved light extraction efficiency | Electricity | 82 | Expired |
| US7064355B2 | Light emitting diodes with improved light extraction efficiency | Electricity | 58 | Expired |
| US7462502B2 | Color control by alteration of wavelength converting element | Electricity | 44 | Active |
| US4912532A | Electro-optical device with inverted transparent substrate and method for making same | Electricity | 39 | Expired |
| US6946309B2 | III-Phosphide and III-Arsenide flip chip light-emitting devices | Electricity | 34 | Expired |
| US7419839B2 | Bonding an optical element to a light emitting device | Electricity | 34 | Expired |
| US6576932B2 | Increasing the brightness of III-nitride light emitting devices | Electricity | 33 | Expired |
| US6914272B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 28 | Expired |
| US6657300B2 | Formation of ohmic contacts in III-nitride light emitting devices | Electricity | 27 | Expired |
| US7902566B2 | Color control by alteration of wavelength converting element | Electricity | 27 | Active |
| US5185288A | Epitaxial growth method | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7276737B2 | Light emitting devices with improved light extraction efficiency | Electricity | 18 | Expired |
| US5115286A | Electro-optical device with inverted transparent substrate and method for making same | Electricity | 15 | Expired |
| US8067254B2 | Common optical element for an array of phosphor converted light emitting devices | Electricity | 11 | Active |
| US7279345B2 | Method of forming light emitting devices with improved light extraction efficiency | Electricity | 9 | Expired |
| US10312422B2 | Light emitting devices with optical elements and bonding layers | Electricity | 8 | Active |
| US7345323B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 7 | Expired |
| US10886437B2 | Devices and structures bonded by inorganic coating | Electricity | 6 | Active |
| US10885772B2 | Road lighting | Emerging Cross-Sectional Technologies | 5 | Active |
| US11107346B2 | Road lighting | Emerging Cross-Sectional Technologies | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.