Semiconductor device and method of fabricating the same
US7064436B2 · kind B2 · utility
63Cited by
2References
2Claims
0Family size
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Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.