Patent · US Expired

Semiconductor device and method of fabricating the same

US7064436B2 · kind B2 · utility

63Cited by
2References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 23, 2004
Grant dateJun 20, 2006
Priority date
Expiry dateNov 23, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/014
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.