Magnetic random access memory and method for manufacturing the same
US7064974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2003 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Apr 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.