Tetsuhiro Suzuki
49Patents
9h-index
26Co-inventors
75Inventor score
Filing activity: Jun 15, 1995 → Jun 17, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8379429B2 | Domain wall motion element and magnetic random access memory | Emerging Cross-Sectional Technologies | 17 | Active |
| US7929342B2 | Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory | Electricity | 17 | Active |
| US8120127B2 | Magnetic random access memory and method of manufacturing the same | Electricity | 14 | Active |
| US8040724B2 | Magnetic domain wall random access memory | Electricity | 13 | Active |
| US7817462B2 | Magnetic random access memory | Electricity | 13 | Active |
| US7068536B2 | Magnetic random access memory, and production method therefor | Electricity | 13 | Expired |
| US6084405A | Transducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic field | Physics | 12 | Expired |
| US7064974B2 | Magnetic random access memory and method for manufacturing the same | Electricity | 12 | Expired |
| US7242047B2 | Magnetic memory adopting synthetic antiferromagnet as free magnetic layer | Electricity | 10 | Expired |
| US9082497B2 | Magnetic memory using spin orbit interaction | Electricity | 9 | Active |
| US8830735B2 | Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film | Emerging Cross-Sectional Technologies | 9 | Active |
| US8154913B2 | Magnetoresistance effect element and magnetic random access memory | Electricity | 9 | Active |
| US5790351A | Magnetoresistive head with conductive underlayer | Physics | 8 | Expired |
| US8174873B2 | Magnetic random access memory and initializing method for the same | Electricity | 8 | Active |
| US8174086B2 | Magnetoresistive element, and magnetic random access memory | Electricity | 7 | Active |
| US9379312B2 | Magnetoresistive effect element and magnetic random access memory using the same | Electricity | 7 | Active |
| US8559214B2 | Magnetic memory device and magnetic random access memory | Electricity | 7 | Active |
| US8687414B2 | Magnetic memory element and magnetic random access memory | Electricity | 7 | Active |
| US8120950B2 | Semiconductor device | Physics | 7 | Active |
| US8503222B2 | Non-volatile logic circuit | Electricity | 6 | Active |
| US8159872B2 | Magnetic random access memory | Emerging Cross-Sectional Technologies | 5 | Active |
| US6154348A | Magnetoresistive head and method of initialization having a non-planar anti-ferromagnetic layer | Physics | 5 | Expired |
| US6804088B1 | Thin film magnetic head, manufacturing method thereof and magnetic storage | Physics | 4 | Expired |
| US8194436B2 | Magnetic random access memory, write method therefor, and magnetoresistance effect element | Electricity | 4 | Active |
| US8791534B2 | Magnetic memory device and magnetic memory | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.