Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof
US7064986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Sep 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory device which differentially uses a start programming voltage during a programming operation mode in order to reduce a dispersion for the number of programming loops, the programming method includes previously storing a row address that indicates at least one specific word line among a plurality of word lines; and applying a start programming voltage to the specific word line, when a row address applied in a programming operation mode coincides with the stored row address, the start programming voltage having a level that is different from a level of start programming voltage to be applied to the rest word lines except the specific word line, whereby reducing dispersion for the programming loop number and realizing a high-speed programming operation and operating efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.