Low temperature hermetic sealing method having passivation layer
US7065867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2002 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49794
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hermetic sealing method, which is capable of preventing oxidation of a micro-electromechanical system (MEMS) and sealing the MEMS at a low temperature. A low temperature hermetic sealing method having a passivation layer includes depositing a junction layer, a wetting layer, and a solder layer on a prepared lid frame, depositing a first protection layer for preventing oxidation on the solder layer and forming a lid, preparing a package base on which a device is disposed, and in which a metal layer and a second protection layer are formed around the device, and assembling the lid and the package base, heating, and sealing them. The protection layer is laminated on the solder layer that is formed by the lid, thereby preventing oxidation without using a flux. The low temperature hermetic sealing method having a passivation layer is suitable for sealing a device, such as the MEMS, which is sensitive to heat, water and other by-products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.