Selective growth method, and semiconductor light emitting device and fabrication method thereof
US7067339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2005 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Jun 3, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.