High-voltage metal-oxide-semiconductor devices and method of making the same
US7067365B1 · kind B1 · utility
15Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2005 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | May 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
An improved high-voltage process is disclosed. In order to improve the performance in terms of breakdown voltage and to maintain the integrity of the STI structures, the thick gate oxide layer of the high-voltage device area is not etched back before a high-dosage ion doping process. One photo mask is therefore omitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.