Method for manufacturing semiconductor device
US7067389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Oct 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present invention discloses a method for forming an element isolation film of a semiconductor device, comprising the steps of: sequentially forming a pad oxide film, a pad nitride film and a mask oxide film on a semiconductor substrate on which a first region for forming a high voltage device and a second region for forming a low voltage device or a flash memory cell are defined; etching the mask oxide film, the pad nitride film and the pad oxide film in the first region and the mask oxide film in the second region, and forming an oxide film for the high voltage device in the first region; removing the residual pad nitride film in the second region; removing the nitride film and partially removing the oxide film for the high voltage device in the first region, wherein the oxide film for the high voltage device has a third thickness; removing the residual pad oxide film in the second region; partially removing the oxide film for the high voltage device in the first region according to a cleaning process, wherein the oxide film for the high voltage device has a third thickness; and forming a tunnel oxide film over the resulting structure, wherein a gate oxide film for a high volt…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.