Method of producing a thin layer of semiconductor material
US7067396B2 · kind B2 · utility
287Cited by
31References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | May 31, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of producing a thin layer of semiconductor material including:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.