Gallium-nitride-based light-emitting apparatus
US7067838B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Apr 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.