Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting

US7067840B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hagen Klauk · Erlangen, DE
• Günter Schmid · Hemhofen, DE

Key dates

• Filing date: Oct 30, 2002
• Grant date: Jun 27, 2006
• Expiry date: Mar 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/60

Abstract

A method for selectively doping an organic semiconductor 1material in the region of a contact area .1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.