MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
US7067866B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Jun 26, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and system for providing magnetic memory cells in a magnetic memory is disclosed. The method and system include providing each magnetic memory element, providing a first write line and a second write line for each magnetic memory element. The magnetic memory element has a top portion and a bottom portion. The first write line is below the magnetic memory element and is electrically connected with the bottom portion of the magnetic memory element. The second write line is above the magnetic memory element. The second write line is electrically isolated from the magnetic memory element and oriented at an angle to the first write line. The magnetic memory cell allows for a simplified fabrication process, a reduced cell size, and an improved programming efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.