Applied Spintronics Technology, Inc.
16Patents
0Active
16Granted
30Portfolio score
Filing activity: Jun 11, 2003 → Jun 9, 2004
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7067866B2 | MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture | Performing Operations; Transporting | 44 | Expired |
| US6982916B2 | Method and system for providing temperature dependent programming for magnetic memories | Physics | 37 | Expired |
| US6963500B2 | Magnetic tunneling junction cell array with shared reference layer for MRAM applications | Physics | 36 | Expired |
| US6909633B2 | MRAM architecture with a flux closed data storage layer | Physics | 35 | Expired |
| US6864551B2 | High density and high programming efficiency MRAM design | Performing Operations; Transporting | 33 | Expired |
| US7009266B2 | Method and system for providing a magnetic element including passivation structures | Electricity | 26 | Expired |
| US6870760B2 | Method and system for performing readout utilizing a self reference scheme | Physics | 23 | Expired |
| US6940749B2 | MRAM array with segmented word and bit lines | Physics | 18 | Expired |
| US6977838B1 | Method and system for providing a programmable current source for a magnetic memory | Physics | 13 | Expired |
| US6870759B2 | MRAM array with segmented magnetic write lines | Physics | 11 | Expired |
| US6909630B2 | MRAM memories utilizing magnetic write lines | Physics | 10 | Expired |
| US6982445B2 | MRAM architecture with a bit line located underneath the magnetic tunneling junction device | Electricity | 4 | Expired |
| US6812538B2 | MRAM cells having magnetic write lines with a stable magnetic state at the end regions | Physics | 3 | Expired |
| US7123506B2 | Method and system for performing more consistent switching of magnetic elements in a magnetic memory | Physics | 1 | Expired |
| US7027324B2 | Method and system for providing common read and write word lines for a segmented word line MRAM array | Physics | 0 | Expired |
| US6933550B2 | Method and system for providing a magnetic memory having a wrapped write line | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.