Semiconductor device
US7067897B2 · kind B2 · utility
7Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Feb 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a substrate, a plurality of dielectric films formed on the substrate, laid one upon another, and a fuse interconnect-wire formed above the substrate and covered with a predetermined one of the dielectric films, and including a fuse main body which is to be blown to electrically disconnect the fuse interconnect-wire, which is smaller than a bottom of a fuse-blowing recess made in the predetermined dielectric film, which has a length not less than the diameter of a fuse-blowing laser beam and which opposes the bottom of the fuse-blowing recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.