Semiconductor device having a self-aligned base contact and narrow emitter
US7067898B1 · kind B1 · utility
4Cited by
15References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 25, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A semiconductor structure having a self-aligned base contact and an emitter, where the base contact is electrically isolated from the emitter by a dielectric layer. The separation between the base contact and the emitter is determined by the thickness of the dielectric layer and the width of the emitter is determined by the minimum resolution provided by the fabrication techniques and tools used to define features within the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.