Phase-change memory device with overvoltage protection and method for protecting a phase-change memory device against overvoltages
US7068534B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device includes a plurality of phase-change memory cells, arranged in rows and columns, phase-change memory cells arranged on the same column being connected to a same bit line; a plurality of first selectors, each coupled to a respective phase-change memory cell; an addressing circuit for selectively addressing at least one of the bit lines, one of the first selectors, and the phase-change memory cell connected to the addressed bit line and to the addressed first selector; and a regulated voltage supply circuit, selectively connectable to the addressed bit line, for supplying a bit line voltage. The bit line voltage is correlated to a first control voltage on the addressed first selector, coupled to the addressed phase-change memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.