Magnetic random access memory, and production method therefor
US7068536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Jan 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In an aspect of the present invention, a magnetic random access memory includes a substrate, a MTJ (Magnetic tunnel Junction) device formed above the substrate, a first wiring line formed above the substrate, and a second wiring line formed above the substrate. The MTJ device includes a pinned ferromagnetic layer which has a pinned magnetization, a free ferromagnetic lamination layer, and a tunnel barrier layer interposed between the pinned ferromagnetic layer and the free ferromagnetic lamination layer. The free ferromagnetic lamination layer includes a first ferromagnetic layer coupled to the tunnel barrier layer and having a reversible first magnetization, a second ferromagnetic layer which has and a second magnetization whose direction is opposite to a direction of the first magnetization, the second magnetization being reversible, and a non-magnetic conductive layer provided between the first ferromagnetic layer and the second ferromagnetic layer and having a sheet resistance lower than sheet resistances of the first ferromagnetic layer and the second ferromagnetic layer. A write current is supplied the free ferromagnetic lamination layer through one of the first wiring line a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.