Method and device for programming an electrically programmable non-volatile semiconductor memory
US7068540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Apr 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device and method for programming an electrically programmable memory applies at least one first programming pulse to a group of memory cells (MC1–MCk) of the memory, accesses the memory cells of the group to ascertain a programming state thereof, and applies at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.