Inventor · Dalmine, IT

Roberto Ravasio

26Patents
9h-index
25Co-inventors
75Inventor score

Filing activity: Apr 16, 1992 → Jan 29, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US7366014B2 Double page programming system and method Physics 26 Active
US7800943B2 Integrated circuit having a memory cell arrangement and method for reading a memory cell state using a plurality of partial readings Physics 20 Active
US7362616B2 NAND flash memory with erase verify based on shorter evaluation time Physics 18 Active
US5418849A Procedure and device for adaptive digital cancellation of the echo generated in telephone connections with time-variant characteristics Electricity 17 Expired
US7336538B2 Page buffer circuit and method for multi-level NAND programmable memories Physics 15 Active
US7382660B2 Method for accessing a multilevel nonvolatile memory device of the flash NAND type Physics 12 Active
US7017099B2 Method for error control in multilevel cells with configurable number of stored bits Physics 11 Expired
US7394694B2 Flash memory device with NAND architecture with reduced capacitive coupling effect Physics 10 Active
US7730357B2 Integrated memory system Physics 9 Expired
US8966335B2 Method for performing error corrections of digital information codified as a symbol sequence Electricity 9 Active
US7031193B2 Method and device for programming an electrically programmable non-volatile semiconductor memory Physics 8 Expired
US7940575B2 Memory device and method providing logic connections for data transfer Emerging Cross-Sectional Technologies 6 Active
US7581153B2 Memory with embedded error correction codes Physics 5 Active
US8065467B2 Non-volatile, electrically-programmable memory Physics 5 Active
US7328397B2 Method for performing error corrections of digital information codified as a symbol sequence Electricity 4 Expired
US7529136B2 Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations Physics 4 Active
US7068540B2 Method and device for programming an electrically programmable non-volatile semiconductor memory Physics 3 Expired
US7221602B2 Memory system comprising a semiconductor memory Physics 3 Expired
US7035142B2 Non volatile memory device including a predetermined number of sectors Physics 2 Expired
US7908543B2 Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code Physics 2 Active
US7937576B2 Configuration of a multi-level flash memory device Physics 1 Active
US10630317B2 Method for performing error corrections of digital information codified as a symbol sequence Electricity 0 Active
US6956773B2 Circuit for programming a non-volatile memory device with adaptive program load control Physics 0 Expired
US7719894B2 Method of programming cells of a NAND memory device Physics 0 Active
US8347201B2 Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.