PCRAM memory cell and method of making same
US7071021B2 · kind B2 · utility
20Cited by
159References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2002 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Aug 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.