Precursors for film formation
US7071125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Sep 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.