Semiconductor structure with a switch element and an edge element

US7071503B2 · kind B2 · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Karl-Otto Dohnke · Schnaittach, DE
• Rudolf Elpelt · Erlangen, DE
• Peter Friedrichs · Koblenzer Straße, DE
• Heinz Mitlehner · Uttenreuth, DE
• Reinhold Schorner · Großenseebach, DE

Key dates

• Filing date: Sep 24, 2004
• Grant date: Jul 4, 2006
• Expiry date: Sep 24, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/831

Abstract

A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.