Model optimization for structures with additional materials
US7072049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2003 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Dec 26, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95615
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A wafer structure profile is modeled by determining one or more termination criteria. A determination is made as to whether a wafer structure includes at least one layer having three or more materials alone a line within the at least one layer. An optical metrology model for the wafer structure is created, where three or more materials are incorporated in the model for the at least one layer having three or more materials. A set of diffraction signals is simulated using the optical metrology model. The set of simulated diffraction signals and a set of diffraction signals measured off of the wafer structure are used to determine if the one or more termination criteria are met. The optical metrology model is modified until the one or more termination criteria are met.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.