Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
US7074527B2 · kind B2 · utility
15Cited by
9References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 23, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jun 1, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A bilayer hardmask 26 is used to manufacture a mask 10, which is can be implemented to pattern a resist 165 on a semiconductor wafer 150. In one embodiment, the bilayer hardmask 26 has two layers: a first hardmask layer 28 and a second hardmask layer 30. The first hardmask layer 28 may be carbon and can be etched selective to the overlying second hardmask layer 30 and an underlying absorber structure 20. In one embodiment, the second hardmask layer 30 is a transparent layer of SiON, SiN, or SiO2. The bilayer hardmask 26 allows for a thinner resist to be used during fabrication of the mask 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.