Gate electrode of a semiconductor device and method of forming the same
US7074671B2 · kind B2 · utility
3Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jul 23, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Nov 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
Disclosed are an electrode of a semiconductor device and a method of forming the same. A polysilicon layer is formed on a semiconductor substrate. An amorphous silicon capping layer is then formed on the polysilicon layer. A silicide layer is formed on the capping layer. The capping layer prevents chlorine ions from diffusing downward to the polysilicon layer. Accordingly, abnormal growth of the polysilicon layer can be prevented, thus improving the stability of the electrical characteristics of a semiconductor device electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.