Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
US7074720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2002 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Oct 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion 18a formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member 17 for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion 18b formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.