Method of fabrication of an infrared radiation detector and infrared detector device
US7075081B2 · kind B2 · utility
16Cited by
41References
20Claims
0Family size
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Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.