Nitride semiconductor substrate and its production method
US7075111B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Apr 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor substrate having a diameter of 10 mm or more, which has a single-layer structure composed of a nitride semiconductor layer having a basic composition represented by AlxGa1−xN (0≦x≦1), or a multi-layer structure comprising the nitride semiconductor layer, the mass density of the nitride semiconductor layer being 98% or more of a theoretical mass density ρ (x) represented by the following general formula (1):wherein ax=aGaN+(aAlN−aGaN)x, wherein aGaN represents an a-axis length of GaN, and aAlN represents an a-axis length of AlN; cx=cGaN+(cAlN−cGaN)x, wherein cGaN represents a c-axis length of GaN, and CAlN represents a c-axis length of AlN; Mx=MGa+(MAl−MGa)x, wherein MGa represents the atomic weight of Ga, and MAl represents the atomic weight of Al; MN represents the atomic weight of nitrogen; and Na represents Avogadro's number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.