Thyristor device with carbon lifetime adjustment implant and its method of fabrication

US7075122B1 · kind B1 · utility

Assignee

• T-RAM Semiconductor · US

Inventors

• Kevin Yang · Santa Clara, US
• Farid Nemati · Redwood City, US
• Scott Robins · San Jose, US
• James D. Plummer · Portola Valley, US
• Hyun-Jin Cho · Seoul, KR

Key dates

• Filing date: Sep 25, 2003
• Grant date: Jul 11, 2006
• Expiry date: Sep 25, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.