Four terminal non-volatile transistor device
US7075141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | May 11, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.