Venkatachalam C. Jaiprakash
41Patents
14h-index
20Co-inventors
77Inventor score
Filing activity: Dec 30, 1997 → Jul 30, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6924538B2 | Devices having vertically-disposed nanofabric articles and methods of making the same | Emerging Cross-Sectional Technologies | 152 | Expired |
| US7294877B2 | Nanotube-on-gate FET structures and applications | Electricity | 116 | Expired |
| US7115901B2 | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same | Emerging Cross-Sectional Technologies | 112 | Expired |
| US6150231A | Overlay measurement technique using moire patterns | Physics | 80 | Expired |
| US6849496B2 | DRAM with vertical transistor and trench capacitor memory cells and method of fabrication | Electricity | 57 | Expired |
| US5940717A | Recessed shallow trench isolation structure nitride liner and method for making same | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6944054B2 | NRAM bit selectable two-device nanotube array | Emerging Cross-Sectional Technologies | 44 | Expired |
| US7259410B2 | Devices having horizontally-disposed nanofabric articles and methods of making the same | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7161218B2 | One-time programmable, non-volatile field effect devices and methods of making same | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7113426B2 | Non-volatile RAM cell and array using nanotube switch position for information state | Physics | 24 | Expired |
| US7015092B2 | Methods for forming vertical gate transistors providing improved isolation and alignment of vertical gate contacts | Electricity | 22 | Expired |
| US6995046B2 | Process for making byte erasable devices having elements made with nanotubes | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7075141B2 | Four terminal non-volatile transistor device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7385266B2 | Sensor platform using a non-horizontally oriented nanotube element | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7274078B2 | Devices having vertically-disposed nanofabric articles and methods of making the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6960818B1 | Recessed shallow trench isolation structure nitride liner and method for making same | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7045421B2 | Process for making bit selectable devices having elements made with nanotubes | Electricity | 12 | Expired |
| US7911831B2 | Nanotube-on-gate FET structures and applications | Electricity | 11 | Active |
| US7304357B2 | Devices having horizontally-disposed nanofabric articles and methods of making the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6605504B1 | Method of manufacturing circuit with buried strap including a liner | Electricity | 10 | Expired |
| US7780918B2 | Sensor platform using a horizontally oriented nanotube element | Emerging Cross-Sectional Technologies | 9 | Active |
| US7112464B2 | Devices having vertically-disposed nanofabric articles and methods of making the same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6809368B2 | TTO nitride liner for improved collar protection and TTO reliability | Electricity | 8 | Expired |
| US7538400B2 | Sensor platform using a non-horizontally oriented nanotube element | Emerging Cross-Sectional Technologies | 8 | Active |
| US6509226B1 | Process for protecting array top oxide | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.