Magneto-resistance effect element with magnetism sensitive region controlled by voltage applied to gate electrode
US7075755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jan 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0016
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magneto-resistance effect element of the present invention allows detection of a micro-bit signal with a high sensitivity. The magneto-resistance effect element is provided with a first magnetic substance layer, a spacer layer stacked on the first magnetic substance layer, a second magnetic substance layer stacked on the spacer, an insulating layer positioned adjacent to a stacked structure comprising the first magnetic substance layer, the spacer layer and the second magnetic substance layer, a gate electrode positioned adjacent to the insulating layer, and a magnetism sensitive region controlled by a voltage applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.