Writing circuit for a phase change memory device
US7075841B2 · kind B2 · utility
29Cited by
4References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jun 28, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device of a phase change type, wherein a memory cell has a memory element of calcogenic material switcheable between at least two phases associated with two different states of the memory cell. A write stage is connected to the memory cell and has a capacitive circuit configured to generate a discharge current having no constant portion and to cause the memory cell to change state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.