Patent · US Expired

Laser diode with vertical resonator and method for fabricating the diode

US7075961B2 · kind B2 · utility

2Cited by

4References

49Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Steinle · Munich, DE
Hans-Dietrich Wolf · Gerbrunn, DE

Key dates

Filing date	Sep 3, 2003
Grant date	Jul 11, 2006
Priority date	—
Expiry date	Dec 29, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a laser diode including a vertical resonator and to a method for producing the laser diode such that at least one active layer is configured between reflective layers. The invention is characterized by configuring at least one antioxidation layer between the reflective layers, thus preventing distortion caused by unintentional oxidation. The antioxidation layer consists of a III–V semiconductor material with a proportion of a molar aluminum of less than 0.7 and/or a III–V semiconductor material with an optical depth of at least two quarter waves.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.