Process for chemical-mechanical polishing of metal substrates
US7077727B2 · kind B2 · utility
0Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Feb 12, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.